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  1 inch x 0.85 inch x 0.062 inch. dmn66d0l new product features ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? small surface mount package ? esd protected gate, 1kv (hbm) ? lead free/rohs compliant (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-323 ? case material: molded plastic. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: solderable per mil-std-202, method 208 ? lead free plating (matte tin finish annealed over alloy 42 leadframe). ? terminal connecti ons: see diagram ? weight: 0.006 grams (approximate) sot-323 top view top view d g s source equivalent circuit gate protection diode gate drain esd protected, 1kv maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 60 v gate-source voltage (note 1) continuous v gss 20 v drain current (note 1) continuous continuous @ 100c pulsed i d 115 73 800 ma thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation p d 200 mw thermal resistance, junction to ambient r ja 625 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 3) drain-source breakdown voltage bv dss 60 70 ? v v gs = 0v, i d = 10 a zero gate voltage drain current @ t c = 25c @ t c = 125c i dss ? ? 1.0 500 a v ds = 60v, v gs = 0v gate-body leakage i gss ? ? 5 a v gs = 20v, v ds = 0v on characteristics (note 3) gate threshold voltage v gs(th) 1.2 ? 2.0 v v ds = v gs , i d = 250 a v gs = 5.0v, i d = 0.115a static drain-source on-resistance @ t j = 25c @ t j = 125c r ds (on) ? 3.5 3.0 6 5 v gs = 10v, i d = 0.115a forward transconductance g fs 80 ? ? ms v ds = 10v, i d = 0.115a dynamic characteristics input capacitance c iss ? 23 ? pf output capacitance c oss ? 3.4 ? pf reverse transfer capacitance c rss ? 1.4 ? pf v ds = 25v, v gs = 0v, f = 1.0mhz switching characteristics turn-on delay time t d(on) ? 10 ? ns turn-off delay time t d(off) ? 33 ? ns v dd = 30v, i d = 0.115a, r l = 150 , v gen = 10v , r gen = 25 notes: 1. device mounted on fr-4 pcb, 2. no purposefully added lead. 3. short duration pulse test us ed to minimize self-heating effect. 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification


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